Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4103DY-T1-GE3

SI4103DY-T1-GE3

SI4103DY-T1-GE3

Part NumberSI4103DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 30V SO-8

DatasheetSI4103DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 14A (Ta), 16A (Tc) 2.5W (Ta), 5.2W (Tc) Surface Mount 8-SO

To learn about the specification of SI4103DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4103DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4103DY-T1-GE3.
We are offering SI4103DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4103DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4103DY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4103DY-T1-GE3 - Related Products

	SIUD403ED-T1-GE3	Vishay Siliconix, P-Channel 20V 500mA (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806, TrenchFET® Gen III	View
	RF4C050APTR	Rohm Semiconductor, P-Channel 20V 10A (Ta) 2W (Ta) Surface Mount HUML2020L8,	View
	TP0620N3-G	Microchip Technology, P-Channel 200V 175mA (Tj) 1W (Ta) Through Hole TO-92-3,	View
	NTMD4184PFR2G	ON Semiconductor, P-Channel 30V 2.3A (Ta) 770mW (Ta) Surface Mount 8-SOIC,	View
	IXTP140P05T	IXYS, P-Channel 50V 140A (Tc) 298W (Tc) Through Hole TO-220AB, TrenchP™	View
	FDMA510PZ	ON Semiconductor, P-Channel 20V 7.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	IPP120P04P4L03AKSA1	Infineon Technologies, P-Channel 40V 120A (Tc) 136W (Tc) Through Hole PG-TO220-3-1, Automotive, AEC-Q101, OptiMOS™	View
	SI4463CDY-T1-GE3	Vishay Siliconix, P-Channel 20V 13.6A (Ta), 49A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IRF9640PBF	Vishay Siliconix, P-Channel 200V 11A (Tc) 125W (Tc) Through Hole TO-220AB,	View
	IRF9540SPBF	Vishay Siliconix, P-Channel 100V 19A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D2PAK,	View
	PMN70XPX	Nexperia USA Inc., P-Channel 20V 3.1A (Ta) 530mW (Ta), 4.46W (Tc) Surface Mount 6-TSOP,	View
	IRFR9010TRPBF	Vishay Siliconix, P-Channel 50V 5.3A (Tc) 25W (Tc) Surface Mount D-Pak,	View

SI4103DY-T1-GE3 - Tags

SI4103DY-T1-GE3 SI4103DY-T1-GE3 PDF SI4103DY-T1-GE3 datasheet SI4103DY-T1-GE3 specification SI4103DY-T1-GE3 image SI4103DY-T1-GE3 India Renesas Electronics India SI4103DY-T1-GE3 buy SI4103DY-T1-GE3 SI4103DY-T1-GE3 price SI4103DY-T1-GE3 distributor SI4103DY-T1-GE3 supplier SI4103DY-T1-GE3 wholesales