Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4156DY-T1-GE3

SI4156DY-T1-GE3

SI4156DY-T1-GE3

Part NumberSI4156DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 24A 8-SOIC

DatasheetSI4156DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 24A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO

To learn about the specification of SI4156DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4156DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4156DY-T1-GE3.
We are offering SI4156DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4156DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4156DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 15.7A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4156DY-T1-GE3 - Related Products

	BSC079N03LSCGATMA1	Infineon Technologies, N-Channel 30V 14A (Ta), 50A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	STF8NK100Z	STMicroelectronics, N-Channel 1000V 6.5A (Tc) 40W (Tc) Through Hole TO-220FP, SuperMESH™	View
	BSP297H6327XTSA1	Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	TK14A65W5,S5X	Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 40W (Tc) Through Hole TO-220SIS, DTMOSIV	View
	SI7456DP-T1-E3	Vishay Siliconix, N-Channel 100V 5.7A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	FCP104N60F	ON Semiconductor, N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-220-3, HiPerFET™, Polar™	View
	STD134N4F7AG	STMicroelectronics, N-Channel 40V 80A (Tc) 134W (Tc) Surface Mount DPAK, STripFET™	View
	SIHD9N60E-GE3	Vishay Siliconix, N-Channel 600V 9A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA),	View
	IXFK24N100	IXYS, N-Channel 1000V 24A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™	View
	NVTFS5C670NLTAG	ON Semiconductor, N-Channel 60V 16A (Ta), 70A (Tc) 3.2W (Ta), 63W (Tc) Surface Mount 8-WDFN (3.3x3.3), Automotive, AEC-Q101	View
	PMZ600UNELYL	Nexperia USA Inc., N-Channel 20V 600mA (Tc) 2.7W (Tc) Surface Mount DFN1006-3,	View
	IXFA20N85XHV	IXYS, N-Channel 850V 20A (Tc) 540W (Tc) Surface Mount TO-263 (D2Pak-HV), HiPerFET™	View

SI4156DY-T1-GE3 - Tags

SI4156DY-T1-GE3 SI4156DY-T1-GE3 PDF SI4156DY-T1-GE3 datasheet SI4156DY-T1-GE3 specification SI4156DY-T1-GE3 image SI4156DY-T1-GE3 India Renesas Electronics India SI4156DY-T1-GE3 buy SI4156DY-T1-GE3 SI4156DY-T1-GE3 price SI4156DY-T1-GE3 distributor SI4156DY-T1-GE3 supplier SI4156DY-T1-GE3 wholesales