Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4401FDY-T1-GE3

SI4401FDY-T1-GE3

SI4401FDY-T1-GE3

Part NumberSI4401FDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 40V SO-8

DatasheetSI4401FDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO

To learn about the specification of SI4401FDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4401FDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4401FDY-T1-GE3.
We are offering SI4401FDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4401FDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4401FDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	9.9A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	14.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4000pF @ 20V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4401FDY-T1-GE3 - Related Products

	RS3E075ATTB	Rohm Semiconductor, P-Channel 30V 2W (Ta) Surface Mount 8-SOP,	View
	ZXMP6A17GTA	Diodes Incorporated, P-Channel 60V 3A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	SI2365EDS-T1-GE3	Vishay Siliconix, P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236, TrenchFET®	View
	BSH201,215	Nexperia USA Inc., P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount TO-236AB,	View
	DMP2078LCA3-7	Diodes Incorporated, P-Channel 20V 3.4A (Ta) 810mW (Ta) Surface Mount X4-DSN1006-3,	View
	PMV48XPAR	Nexperia USA Inc., P-Channel 20V 3.5A (Ta) 510mW (Ta), 4.15W (Tc) Surface Mount TO-236AB,	View
	FDMC510P	ON Semiconductor, P-Channel 20V 12A (Ta), 18A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	SSM3J143TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	IRLMS5703TRPBF	Infineon Technologies, P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	SSM3J327R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.9A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	FQPF27P06	ON Semiconductor, P-Channel 60V 17A (Tc) 47W (Tc) Through Hole TO-220F, QFET®	View
	SFT1345-TL-H	ON Semiconductor, P-Channel 100V 11A (Ta) 1W (Ta), 35W (Tc) Surface Mount TP-FA,	View

SI4401FDY-T1-GE3 - Tags

SI4401FDY-T1-GE3 SI4401FDY-T1-GE3 PDF SI4401FDY-T1-GE3 datasheet SI4401FDY-T1-GE3 specification SI4401FDY-T1-GE3 image SI4401FDY-T1-GE3 India Renesas Electronics India SI4401FDY-T1-GE3 buy SI4401FDY-T1-GE3 SI4401FDY-T1-GE3 price SI4401FDY-T1-GE3 distributor SI4401FDY-T1-GE3 supplier SI4401FDY-T1-GE3 wholesales