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SI4421DY-T1-GE3

SI4421DY-T1-GE3

Part NumberSI4421DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 10A 8-SOIC

DatasheetSI4421DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SO

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SI4421DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4421DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	8.75mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 850µA
Gate Charge (Qg) (Max) @ Vgs	125nC @ 4.5V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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