SI4430BDY-T1-E3
SI4430BDY-T1-E3
Part Number SI4430BDY-T1-E3 Description MOSFET N-CH 30V 14A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 14A (Ta) 1.6W (Ta) Surface Mount 8-SO
To learn about the specification of SI4430BDY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4430BDY-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4430BDY-T1-E3.
We are offering SI4430BDY-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4430BDY-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si4430BDY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 4.5V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.6W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4430BDY-T1-E3 - Related ProductsMore >>
IPP60R099CPXKSA1 Infineon Technologies, N-Channel 650V 31A (Tc) 255W (Tc) Through Hole PG-TO220-3, CoolMOS™
View
IRFPF30PBF Vishay Siliconix, N-Channel 900V 3.6A (Tc) 125W (Tc) Through Hole TO-247-3,
View
FDD6612A ON Semiconductor, N-Channel 30V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®
View
IRLMS1902TRPBF Infineon Technologies, N-Channel 20V 3.2A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®
View
STP10N60M2 STMicroelectronics, N-Channel 600V 7.5A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ II Plus
View
IRFI644GPBF Vishay Siliconix, N-Channel 250V 7.9A (Tc) 40W (Tc) Through Hole TO-220-3,
View
TSM240N03CX6 RFG Taiwan Semiconductor Corporation, N-Channel 30V 6.5A (Tc) 1.56W (Tc) Surface Mount SOT-26,
View
DMN3030LSS-13 Diodes Incorporated, N-Channel 30V 9A (Ta) 2.5W (Ta) Surface Mount 8-SOP,
View
SUM60N10-17-E3 Vishay Siliconix, N-Channel 100V 60A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
View
STF40N65M2 STMicroelectronics, N-Channel 650V 32A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2
View
FQPF5N60C ON Semiconductor, N-Channel 600V 4.5A (Tc) 33W (Tc) Through Hole TO-220F, QFET®
View
RT1C060UNTR Rohm Semiconductor, N-Channel 20V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST,
View
SI4430BDY-T1-E3 - Tags
English
