Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4477DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	26.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 6.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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SI2371EDS-T1-GE3	Vishay Siliconix, P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23, TrenchFET®	View
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SI2321-TP	Micro Commercial Co, P-Channel 20V 2.9A (Ta) 350mW (Ta) Surface Mount SOT-23,	View
IRFI9Z24GPBF	Vishay Siliconix, P-Channel 60V 8.5A (Tc) 37W (Tc) Through Hole TO-220-3,	View
FQP17P06	ON Semiconductor, P-Channel 60V 17A (Tc) 79W (Tc) Through Hole TO-220-3, QFET®	View
IXTH90P10P	IXYS, P-Channel 100V 90A (Tc) 462W (Tc) Through Hole TO-247 (IXTH), PolarP™	View
ZXMP10A17E6TA	Diodes Incorporated, P-Channel 100V 1.3A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
FQPF47P06	ON Semiconductor, P-Channel 60V 30A (Tc) 62W (Tc) Through Hole TO-220F, QFET®	View
ZXM61P02FTA	Diodes Incorporated, P-Channel 20V 900mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
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SI4477DY-T1-GE3

Part NumberSI4477DY-T1-GE3