SI4477DY-T1-GE3
SI4477DY-T1-GE3
Part Number SI4477DY-T1-GE3 Description MOSFET P-CH 20V 26.6A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 26.6A (Tc) 3W (Ta), 6.6W (Tc) Surface Mount 8-SO
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SI4477DY-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4477DY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 26.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 6.2mOhm @ 18A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 10V FET Feature - Power Dissipation (Max) 3W (Ta), 6.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
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