Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4477DY-T1-GE3

SI4477DY-T1-GE3

SI4477DY-T1-GE3

Part NumberSI4477DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 26.6A 8-SOIC

DatasheetSI4477DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 26.6A (Tc) 3W (Ta), 6.6W (Tc) Surface Mount 8-SO

To learn about the specification of SI4477DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4477DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4477DY-T1-GE3.
We are offering SI4477DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4477DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4477DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	26.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 6.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4477DY-T1-GE3 - Related Products

	SI3483CDV-T1-GE3	Vishay Siliconix, P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	VP2110K1-G	Microchip Technology, P-Channel 100V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),	View
	RT1E040RPTR	Rohm Semiconductor, P-Channel 30V 4A (Ta) 550mW (Ta) Surface Mount 8-TSST,	View
	ZXMP10A18KTC	Diodes Incorporated, P-Channel 100V 3.8A (Ta) 2.17W (Ta) Surface Mount TO-252-3,	View
	SQA401EEJ-T1_GE3	Vishay Siliconix, P-Channel 20V 2.68A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	ZVP1320FTA	Diodes Incorporated, P-Channel 200V 35mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,	View
	BSV236SPH6327XTSA1	Infineon Technologies, P-Channel 20V 1.5A (Ta) 560mW (Ta) Surface Mount PG-SOT363-6, OptiMOS™	View
	ZVP2110GTA	Diodes Incorporated, P-Channel 100V 310mA (Ta) 2W (Ta) Surface Mount SOT-223,	View
	STS5P3LLH6	STMicroelectronics, P-Channel 30V 5A (Ta) 2.7W (Ta) Surface Mount 8-SO, DeepGATE™, STripFET™ H6	View
	IRF9640PBF	Vishay Siliconix, P-Channel 200V 11A (Tc) 125W (Tc) Through Hole TO-220AB,	View
	PMZ1200UPEYL	Nexperia USA Inc., P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006-3,	View
	STL8P4LLF6	STMicroelectronics, P-Channel 40V 2.9W (Ta) Surface Mount PowerFlat™ (3.3x3.3), STripFET™ F6	View

SI4477DY-T1-GE3 - Tags

SI4477DY-T1-GE3 SI4477DY-T1-GE3 PDF SI4477DY-T1-GE3 datasheet SI4477DY-T1-GE3 specification SI4477DY-T1-GE3 image SI4477DY-T1-GE3 India Renesas Electronics India SI4477DY-T1-GE3 buy SI4477DY-T1-GE3 SI4477DY-T1-GE3 price SI4477DY-T1-GE3 distributor SI4477DY-T1-GE3 supplier SI4477DY-T1-GE3 wholesales