Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4477DY-T1-GE3

SI4477DY-T1-GE3

SI4477DY-T1-GE3

Part NumberSI4477DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 26.6A 8-SOIC

DatasheetSI4477DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 26.6A (Tc) 3W (Ta), 6.6W (Tc) Surface Mount 8-SO

To learn about the specification of SI4477DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4477DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4477DY-T1-GE3.
We are offering SI4477DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4477DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4477DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	26.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	6.2mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 10V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 6.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4477DY-T1-GE3 - Related Products

	FDN308P	ON Semiconductor, P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	STR2P3LLH6	STMicroelectronics, P-Channel 30V 2A (Ta) 350mW (Tc) Surface Mount SOT-23, STripFET™ H6	View
	RF6C055BCTCR	Rohm Semiconductor, P-Channel 20V 5.5A (Ta) 1W (Tc) Surface Mount TUMT6,	View
	SIS407DN-T1-GE3	Vishay Siliconix, P-Channel 20V 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	AO4411	Alpha & Omega Semiconductor Inc., P-Channel 30V 8A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	NTLUS3A18PZTBG	ON Semiconductor, P-Channel 20V 5.1A (Ta) 700mW (Ta) Surface Mount 6-UDFN (2x2), µCool™	View
	SI2315BDS-T1-E3	Vishay Siliconix, P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SSM3J325F,LF	Toshiba Semiconductor and Storage, P-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount S-Mini, U-MOSVI	View
	RSH070P05GZETB	Rohm Semiconductor, P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
	AONS21357	Alpha & Omega Semiconductor Inc., P-Channel 30V 21A (Ta), 36A (Tc) 5W (Ta), 48W (Tc) Surface Mount 8-DFN-EP (5x6),	View
	NVATS5A112PLZT4G	ON Semiconductor, P-Channel 60V 27A (Ta) 48W (Tc) Surface Mount ATPAK,	View
	PMZ950UPELYL	Nexperia USA Inc., P-Channel 20V 500mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006-3,	View

SI4477DY-T1-GE3 - Tags

SI4477DY-T1-GE3 SI4477DY-T1-GE3 PDF SI4477DY-T1-GE3 datasheet SI4477DY-T1-GE3 specification SI4477DY-T1-GE3 image SI4477DY-T1-GE3 India Renesas Electronics India SI4477DY-T1-GE3 buy SI4477DY-T1-GE3 SI4477DY-T1-GE3 price SI4477DY-T1-GE3 distributor SI4477DY-T1-GE3 supplier SI4477DY-T1-GE3 wholesales