SI4800BDY-T1-E3
SI4800BDY-T1-E3
Part Number SI4800BDY-T1-E3 Description MOSFET N-CH 30V 6.5A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SO
To learn about the specification of SI4800BDY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4800BDY-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4800BDY-T1-E3.
We are offering SI4800BDY-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4800BDY-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si4800BDY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 18.5mOhm @ 9A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V Vgs (Max) ±25V FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4800BDY-T1-E3 - Related ProductsMore >>
HAT2166H-EL-E Renesas Electronics America, N-Channel 30V 45A (Ta) 25W (Tc) Surface Mount LFPAK,
View
SIHP30N60E-E3 Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-220AB,
View
IPB108N15N3GATMA1 Infineon Technologies, N-Channel 150V 83A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
DMN2041L-7 Diodes Incorporated, N-Channel 20V 6.4A (Ta) 780mW (Ta) Surface Mount SOT-23-3,
View
DMN2028UFDF-7 Diodes Incorporated, N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F),
View
STP28NM50N STMicroelectronics, N-Channel 500V 21A (Tc) 150W (Tc) Through Hole TO-220AB, MDmesh™ II
View
FCH067N65S3-F155 ON Semiconductor, N-Channel 650V 44A (Tc) 312W (Tc) Through Hole TO-247 Long Leads, SuperFET® III
View
NTMFS4C032NT1G ON Semiconductor, N-Channel 30V 13A (Ta), 38A (Tc) 2.46W (Ta), 21.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
View
2SK2009TE85LF Toshiba Semiconductor and Storage, N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3,
View
FCH040N65S3-F155 ON Semiconductor, N-Channel 650V 65A (Tc) 417W (Tc) Through Hole TO-247-3, SuperFET® III
View
RS1G120MNTB Rohm Semiconductor, N-Channel 40V 12A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP,
View
FDT439N ON Semiconductor, N-Channel 30V 6.3A (Ta) 3W (Ta) Surface Mount SOT-223-4,
View
SI4800BDY-T1-E3 - Tags
English
