SI4825DDY-T1-GE3
SI4825DDY-T1-GE3
Part Number SI4825DDY-T1-GE3 Description MOSFET P-CH 30V 14.9A 8SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 14.9A (Tc) 2.7W (Ta), 5W (Tc) Surface Mount 8-SO
To learn about the specification of SI4825DDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4825DDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4825DDY-T1-GE3.
We are offering SI4825DDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4825DDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4825DDY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 15V FET Feature - Power Dissipation (Max) 2.7W (Ta), 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4825DDY-T1-GE3 - Related ProductsMore >>
ZVP2110A Diodes Incorporated, P-Channel 100V 230mA (Ta) 700mW (Ta) Through Hole TO-92-3,
View
BSS84 ON Semiconductor, P-Channel 50V 130mA (Ta) 360mW (Ta) Surface Mount SOT-23-3,
View
BSS84-HF Comchip Technology, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,
View
SI7463DP-T1-GE3 Vishay Siliconix, P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
FQP3P20 ON Semiconductor, P-Channel 200V 2.8A (Tc) 52W (Tc) Through Hole TO-220-3, QFET®
View
SI7117DN-T1-E3 Vishay Siliconix, P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
CMLDM8120 TR Central Semiconductor Corp, P-Channel 20V 860mA (Ta) 150mW (Ta) Surface Mount SOT-563,
View
SI4435DY ON Semiconductor, P-Channel 30V 8.8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
RU1C001ZPTL Rohm Semiconductor, P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount UMT3F,
View
SI2323CDS-T1-GE3 Vishay Siliconix, P-Channel 20V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
DMP2021UFDE-7 Diodes Incorporated, P-Channel 20V 11.1A (Ta) 1.9W (Ta) Surface Mount U-DFN2020-6 (Type E),
View
DMP2130L-7 Diodes Incorporated, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,
View
SI4825DDY-T1-GE3 - Tags
English
