Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4842BDY-T1-E3

SI4842BDY-T1-E3

SI4842BDY-T1-E3

Part NumberSI4842BDY-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 28A 8-SOIC

DatasheetSI4842BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SO

To learn about the specification of SI4842BDY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4842BDY-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4842BDY-T1-E3.
We are offering SI4842BDY-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4842BDY-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4842BDY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3650pF @ 15V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4842BDY-T1-E3 - Related Products

	IXTP100N15X4	IXYS, N-Channel 150V 100A (Tc) 375W (Tc) Through Hole TO-220,	View
	TSM038N03PQ33 RGG	Taiwan Semiconductor Corporation, N-Channel 30V 78A (Tc) 39W (Tc) Surface Mount 8-PDFN (3x3),	View
	IPP65R150CFDXKSA2	Infineon Technologies, N-Channel 650V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO220-3, CoolMOS™ CFD2	View
	R5009FNJTL	Rohm Semiconductor, N-Channel 500V 9A (Tc) 50W (Tc) Surface Mount LPTS,	View
	BUK7227-100B,118	Nexperia USA Inc., N-Channel 100V 48A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	STH175N4F6-2AG	STMicroelectronics, N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2, Automotive, AEC-Q101, STripFET™ F6	View
	PMXB360ENEAZ	Nexperia USA Inc., N-Channel 80V 1.1A (Ta) 400mW (Ta), 6.25W (Tc) Surface Mount DFN1010D-3,	View
	IRF6617TRPBF	Infineon Technologies, N-Channel 30V 14A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST, HEXFET®	View
	STP45N10F7	STMicroelectronics, N-Channel 100V 45A (Tc) 60W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII	View
	SI7846DP-T1-GE3	Vishay Siliconix, N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	CSD13381F4	Texas Instruments, N-Channel 12V 2.1A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™	View
	IPB065N03LGATMA1	Infineon Technologies, N-Channel 30V 50A (Tc) 56W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View

SI4842BDY-T1-E3 - Tags

SI4842BDY-T1-E3 SI4842BDY-T1-E3 PDF SI4842BDY-T1-E3 datasheet SI4842BDY-T1-E3 specification SI4842BDY-T1-E3 image SI4842BDY-T1-E3 India Renesas Electronics India SI4842BDY-T1-E3 buy SI4842BDY-T1-E3 SI4842BDY-T1-E3 price SI4842BDY-T1-E3 distributor SI4842BDY-T1-E3 supplier SI4842BDY-T1-E3 wholesales