SI4909DY-T1-GE3
SI4909DY-T1-GE3
Part Number SI4909DY-T1-GE3 Description MOSFET 2P-CH 40V 8A 8SO Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 P-Channel (Dual) 40V 8A 3.2W Surface Mount 8-SO
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SI4909DY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI4909DY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 27mOhm @ 8A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 20V Power - Max 3.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO
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