SI4966DY-T1-E3

Part NumberSI4966DY-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 20V 8SOIC

DatasheetSI4966DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 20V 2W Surface Mount 8-SO

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SI4966DY-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI4966DY

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

Rds On (Max) @ Id, Vgs

25mOhm @ 7.1A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

Base Part Number

SI4966

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