SI5457DC-T1-GE3
SI5457DC-T1-GE3
Part Number SI5457DC-T1-GE3
Description MOSFET P-CH 20V 6A CHIPFET
Package / Case 8-SMD, Flat Lead
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™
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SI5457DC-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI5457DC
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 36mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
FET Feature -
Power Dissipation (Max) 5.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
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