SI5509DC-T1-E3

Part NumberSI5509DC-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 20V 6.1A 1206-8

DatasheetSI5509DC

Package / Case8-SMD, Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 20V 6.1A, 4.8A 4.5W Surface Mount 1206-8 ChipFET™

To learn about the specification of SI5509DC-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI5509DC-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI5509DC-T1-E3.
We are offering SI5509DC-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI5509DC-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI5509DC

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.1A, 4.8A

Rds On (Max) @ Id, Vgs

52mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

455pF @ 10V

Power - Max

4.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™

Base Part Number

SI5509

All categories