SI5511DC-T1-GE3

Part NumberSI5511DC-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 30V 4A 1206-8

DatasheetSI5511DC

Package / Case8-SMD, Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™

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SI5511DC-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI5511DC

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4A, 3.6A

Rds On (Max) @ Id, Vgs

55mOhm @ 4.8A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

435pF @ 15V

Power - Max

3.1W, 2.6W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Lead

Supplier Device Package

1206-8 ChipFET™

Base Part Number

SI5511

All categories