Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI7112DN-T1-GE3

SI7112DN-T1-GE3

SI7112DN-T1-GE3

Part NumberSI7112DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 11.3A 1212-8

DatasheetSi7112DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 11.3A (Tc) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

To learn about the specification of SI7112DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7112DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7112DN-T1-GE3.
We are offering SI7112DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI7112DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si7112DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2610pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SI7112DN-T1-GE3 - Related Products

	STW4N150	STMicroelectronics, N-Channel 1500V 4A (Tc) 160W (Tc) Through Hole TO-247-3, PowerMESH™	View
	TK14N65W5,S1F	Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-247, DTMOSIV	View
	BUK9225-55A,118	Nexperia USA Inc., N-Channel 55V 43A (Tc) 94W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	CSD19506KCS	Texas Instruments, N-Channel 80V 100A (Ta) 375W (Tc) Through Hole TO-220-3, NexFET™	View
	IXFH170N25X3	IXYS, N-Channel 250V 170A (Tc) 960W (Tc) Through Hole TO-247 (IXFH), HiPerFET™	View
	STP36N60M6	STMicroelectronics, N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220, MDmesh™ M6	View
	FDC5612	ON Semiconductor, N-Channel 60V 4.3A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	BSC123N10LSGATMA1	Infineon Technologies, N-Channel 100V 10.6A (Ta), 71A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IPP039N04LGXKSA1	Infineon Technologies, N-Channel 40V 80A (Tc) 94W (Tc) Through Hole PG-TO220-3-1, OptiMOS™	View
	TSM060N03ECP ROG	Taiwan Semiconductor Corporation, N-Channel 30V 70A (Tc) 54W (Tc) Surface Mount TO-252, (D-Pak),	View
	FQD9N25TM	ON Semiconductor, N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak, QFET®	View
	IRFSL7437PBF	Infineon Technologies, N-Channel 40V 195A (Tc) 230W (Tc) Through Hole TO-262, HEXFET®, StrongIRFET™	View

SI7112DN-T1-GE3 - Tags

SI7112DN-T1-GE3 SI7112DN-T1-GE3 PDF SI7112DN-T1-GE3 datasheet SI7112DN-T1-GE3 specification SI7112DN-T1-GE3 image SI7112DN-T1-GE3 India Renesas Electronics India SI7112DN-T1-GE3 buy SI7112DN-T1-GE3 SI7112DN-T1-GE3 price SI7112DN-T1-GE3 distributor SI7112DN-T1-GE3 supplier SI7112DN-T1-GE3 wholesales