SI7172DP-T1-GE3

Part NumberSI7172DP-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7172DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	70mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2250pF @ 100V
FET Feature	-
Power Dissipation (Max)	5.4W (Ta), 96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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IPB011N04NGATMA1	Infineon Technologies, N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View
BUK9M24-60EX	Nexperia USA Inc., N-Channel 60V 32A (Tc) 55W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™	View
TK3R1P04PL,RQ	Toshiba Semiconductor and Storage, N-Channel 40V 58A (Tc) 87W (Tc) Surface Mount DPAK, U-MOSIX-H	View
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PSMN6R5-80BS,118	Nexperia USA Inc., N-Channel 80V 100A (Tc) 210W (Tc) Surface Mount D2PAK,	View
AOT27S60L	Alpha & Omega Semiconductor Inc., N-Channel 600V 27A (Tc) 357W (Tc) Through Hole TO-220, aMOS™	View
IRFIB7N50APBF	Vishay Siliconix, N-Channel 500V 6.6A (Tc) 60W (Tc) Through Hole TO-220-3,	View
NTMFS4C06NT1G	ON Semiconductor, N-Channel 30V 11A (Ta), 69A (Tc) 770mW (Ta), 30.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View