SI7315DN-T1-GE3
SI7315DN-T1-GE3
Part Number SI7315DN-T1-GE3
Description MOSFET P-CH 150V 8.9A 1212-8
Package / Case PowerPAK® 1212-8
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SI7315DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7315DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7315DN-T1-GE3.
We are offering SI7315DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7315DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI7315DN-T1-GE3
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 8.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 315mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 75V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
SI7315DN-T1-GE3 - Related ProductsMore >>
BSP613PH6327XTSA1
Infineon Technologies, P-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
IRFR9214TRPBF
Vishay Siliconix, P-Channel 250V 2.7A (Tc) 50W (Tc) Surface Mount DPAK,
View
FDS4465
ON Semiconductor, P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
ZXMP4A16KTC
Diodes Incorporated, P-Channel 40V 6.6A (Ta) 2.15W (Ta) Surface Mount TO-252-3,
View
RT1A050ZPTR
Rohm Semiconductor, P-Channel 12V 5A (Ta) 600mW (Ta) Surface Mount 8-TSST,
View
IXTK170P10P
IXYS, P-Channel 100V 170A (Tc) 890W (Tc) Through Hole TO-264 (IXTK), PolarP™
View
DMP3015LSS-13
Diodes Incorporated, P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOP,
View
SSM3J358R,LF
Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII
View
MCH6321-TL-E
ON Semiconductor, P-Channel 20V 4A (Ta) Surface Mount 6-MCPH,
View
SI7461DP-T1-GE3
Vishay Siliconix, P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
STL12P6F6
STMicroelectronics, P-Channel 60V 4A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VI
View
SQ2319ADS-T1_GE3
Vishay Siliconix, P-Channel 40V 4.6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®
View
SI7315DN-T1-GE3 - Tags