Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI7317DN-T1-GE3

SI7317DN-T1-GE3

SI7317DN-T1-GE3

Part NumberSI7317DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 150V 2.8A 1212-8

DatasheetSI7317DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 2.8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SI7317DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7317DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7317DN-T1-GE3.
We are offering SI7317DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI7317DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7317DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.8nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	365pF @ 75V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 19.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SI7317DN-T1-GE3 - Related Products

	SQJ431EP-T1_GE3	Vishay Siliconix, P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SQ2309ES-T1_GE3	Vishay Siliconix, P-Channel 60V 1.7A (Tc) 2W (Tc) Surface Mount TO-236 (SOT-23), Automotive, AEC-Q101, TrenchFET®	View
	MCH3375-TL-W	ON Semiconductor, P-Channel 30V 1.6A (Ta) 800mW (Ta) Surface Mount SC-70FL/MCPH3,	View
	IRFR9010TRLPBF	Vishay Siliconix, P-Channel 50V 5.3A (Tc) 25W (Tc) Surface Mount D-Pak,	View
	SI4463BDY-T1-GE3	Vishay Siliconix, P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SSM3J358R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII	View
	DMP1011UCB9-7	Diodes Incorporated, P-Channel 8V 10A (Ta) 890mW (Ta) Surface Mount U-WLB1515-9,	View
	SSM3J134TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	ZXMP3A17E6TA	Diodes Incorporated, P-Channel 30V 3.2A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,	View
	SI2377EDS-T1-GE3	Vishay Siliconix, P-Channel 20V 4.4A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	DMP2021UFDE-7	Diodes Incorporated, P-Channel 20V 11.1A (Ta) 1.9W (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	SIA445EDJT-T1-GE3	Vishay Siliconix, P-Channel 20V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single,	View

SI7317DN-T1-GE3 - Tags

SI7317DN-T1-GE3 SI7317DN-T1-GE3 PDF SI7317DN-T1-GE3 datasheet SI7317DN-T1-GE3 specification SI7317DN-T1-GE3 image SI7317DN-T1-GE3 India Renesas Electronics India SI7317DN-T1-GE3 buy SI7317DN-T1-GE3 SI7317DN-T1-GE3 price SI7317DN-T1-GE3 distributor SI7317DN-T1-GE3 supplier SI7317DN-T1-GE3 wholesales