SI7434DP-T1-GE3
SI7434DP-T1-GE3
Part Number SI7434DP-T1-GE3 Description MOSFET N-CH 250V 2.3A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 250V 2.3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
To learn about the specification of SI7434DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7434DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7434DP-T1-GE3.
We are offering SI7434DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7434DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si7434DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 155mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SI7434DP-T1-GE3 - Related ProductsMore >>
BSZ0589NSATMA1 Infineon Technologies, N-Channel 30V 17A (Ta) 2.1W (Ta) Surface Mount PG-TSDSON-8-FL, OptiMOS™
View
IRFH5025TRPBF Infineon Technologies, N-Channel 250V 3.8A (Ta) 3.6W (Ta), 8.3W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®
View
NVF3055-100T1G ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223, Automotive, AEC-Q101
View
STW24N60M2 STMicroelectronics, N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-247, MDmesh™ II Plus
View
NTNS3190NZT5G ON Semiconductor, N-Channel 20V 224mA (Ta) 120mW (Ta) Surface Mount 3-XLLGA (0.62x0.62),
View
IPW60R070CFD7XKSA1 Infineon Technologies, N-Channel 650V 31A (Tc) 156W (Tc) Through Hole PG-TO247-3, CoolMOS™ CFD7
View
IXFP5N100PM IXYS, N-Channel 1000V 2.3A (Tc) 42W (Tc) Through Hole TO-220 Isolated Tab, HiPerFET™, PolarP2™
View
IRL620PBF Vishay Siliconix, N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB,
View
SQM50N04-4M1_GE3 Vishay Siliconix, N-Channel 40V 50A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak), TrenchFET®
View
BVSS123LT1G ON Semiconductor, N-Channel 100V 170mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,
View
FCP165N65S3 ON Semiconductor, N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3, SuperFET® III
View
STB140NF55T4 STMicroelectronics, N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II
View
SI7434DP-T1-GE3 - Tags
English
