SI7461DP-T1-GE3
SI7461DP-T1-GE3
Part Number SI7461DP-T1-GE3 Description MOSFET P-CH 60V 8.6A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 8.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
To learn about the specification of SI7461DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7461DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7461DP-T1-GE3.
We are offering SI7461DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7461DP-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si7461DP Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 8.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 14.5mOhm @ 14.4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SI7461DP-T1-GE3 - Related ProductsMore >>
BSP317PH6327XTSA1 Infineon Technologies, P-Channel 250V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
IRF9520NPBF Infineon Technologies, P-Channel 100V 6.8A (Tc) Through Hole TO-220AB, HEXFET®
View
DMP2035UFCL-7 Diodes Incorporated, P-Channel 20V 6.6A (Ta) 740mW (Ta) Surface Mount U-DFN1616-6,
View
TSM260P02CX6 RFG Taiwan Semiconductor Corporation, P-Channel 20V 6.5A (Tc) 1.56W (Tc) Surface Mount SOT-26,
View
RSC002P03T316 Rohm Semiconductor, P-Channel 30V 250mA (Ta) 200mW (Ta) Surface Mount SST3,
View
TSM480P06CH X0G Taiwan Semiconductor Corporation, P-Channel 60V 20A (Tc) 66W (Tc) Through Hole TO-251 (IPAK),
View
SSM6J50TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount UF6, U-MOSIV
View
BSO080P03SHXUMA1 Infineon Technologies, P-Channel 30V 12.6A (Ta) 1.79W (Ta) Surface Mount P-DSO-8, OptiMOS™
View
SUD40151EL-GE3 Vishay Siliconix, P-Channel 40V 42A (Tc) 50W (Tc) Surface Mount TO-252AA, TrenchFET® Gen IV
View
SI4401BDY-T1-E3 Vishay Siliconix, P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
SQJ443EP-T1_GE3 Vishay Siliconix, P-Channel 40V 40A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
View
FQD7P06TM ON Semiconductor, P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak, QFET®
View
SI7461DP-T1-GE3 - Tags
English
