SI7655DN-T1-GE3
SI7655DN-T1-GE3
Part Number SI7655DN-T1-GE3
Description MOSFET P-CH 20V 40A PPAK 1212
Package / Case PowerPAK® 1212-8S
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
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SI7655DN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si7655DN
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 10V
FET Feature -
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S (3.3x3.3)
Package / Case PowerPAK® 1212-8S
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