Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si7818DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	135mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

STW33N60DM2	STMicroelectronics, N-Channel 600V 24A (Tc) 190W (Tc) Through Hole TO-247, MDmesh™ DM2	View
PSMN4R0-60YS,115	Nexperia USA Inc., N-Channel 60V 74A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8,	View
IPD038N06N3GATMA1	Infineon Technologies, N-Channel 60V 90A (Tc) 188W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
IRLB8721PBF	Infineon Technologies, N-Channel 30V 62A (Tc) 65W (Tc) Through Hole TO-220AB, HEXFET®	View
FQP55N10	ON Semiconductor, N-Channel 100V 55A (Tc) 155W (Tc) Through Hole TO-220-3, QFET®	View
STD7N90K5	STMicroelectronics, N-Channel 900V 7A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ K5	View
ZVNL110GTA	Diodes Incorporated, N-Channel 100V 600mA (Ta) 1.1W (Ta) Surface Mount SOT-223,	View
SSM3K16CTC,L3F	Toshiba Semiconductor and Storage, N-Channel 20V 200mA (Ta) 500mW (Ta) Surface Mount CST3C,	View
IRF640NSTRLPBF	Infineon Technologies, N-Channel 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK, HEXFET®	View
SIRA16DP-T1-GE3	Vishay Siliconix, N-Channel 30V 16A (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
IRL620STRLPBF	Vishay Siliconix, N-Channel 200V 5.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,	View
SI7810DN-T1-GE3	Vishay Siliconix, N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View

SI7818DN-T1-GE3

Part NumberSI7818DN-T1-GE3