Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI7892BDP-T1-GE3

SI7892BDP-T1-GE3

SI7892BDP-T1-GE3

Part NumberSI7892BDP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 15A PPAK SO-8

DatasheetSi7892BDP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

To learn about the specification of SI7892BDP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7892BDP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7892BDP-T1-GE3.
We are offering SI7892BDP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI7892BDP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si7892BDP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3775pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SI7892BDP-T1-GE3 - Related Products

	R6011ENX	Rohm Semiconductor, N-Channel 600V 11A (Tc) 40W (Tc) Through Hole TO-220FM,	View
	AOD1R4A70	Alpha & Omega Semiconductor Inc., N-Channel 700V 3.8A (Tc) 48W (Tc) Surface Mount TO-252 (DPAK), aMOS™	View
	SIS106DN-T1-GE3	Vishay Siliconix, N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View
	IRF630STRLPBF	Vishay Siliconix, N-Channel 200V 9A (Tc) 3W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263),	View
	SIDR668DP-T1-GE3	Vishay Siliconix, N-Channel 100V 23.2A (Ta), 95A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC, TrenchFET® Gen IV	View
	STD95N4LF3	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™ III	View
	SI3458BDV-T1-GE3	Vishay Siliconix, N-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	NTTFS5C454NLTAG	ON Semiconductor, N-Channel 40V 20A (Ta), 85A (Tc) 3.2W (Ta), 55W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	STW20N95K5	STMicroelectronics, N-Channel 950V 17.5A (Tc) 250W (Tc) Through Hole TO-247-3, SuperMESH5™	View
	DMN4008LFG-7	Diodes Incorporated, N-Channel 40V 14.4A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,	View
	TSM900N06CP ROG	Taiwan Semiconductor Corporation, N-Channel 60V 11A (Tc) 25W (Tc) Surface Mount TO-252, (D-Pak),	View
	IXFK120N65X2	IXYS, N-Channel 650V 120A (Tc) 1250W (Tc) Through Hole TO-264, HiPerFET™	View

SI7892BDP-T1-GE3 - Tags

SI7892BDP-T1-GE3 SI7892BDP-T1-GE3 PDF SI7892BDP-T1-GE3 datasheet SI7892BDP-T1-GE3 specification SI7892BDP-T1-GE3 image SI7892BDP-T1-GE3 India Renesas Electronics India SI7892BDP-T1-GE3 buy SI7892BDP-T1-GE3 SI7892BDP-T1-GE3 price SI7892BDP-T1-GE3 distributor SI7892BDP-T1-GE3 supplier SI7892BDP-T1-GE3 wholesales