SI7960DP-T1-GE3

Part NumberSI7960DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 60V 6.2A PPAK SO-8

DatasheetSi7960DP

Package / CasePowerPAK® SO-8 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 60V 6.2A 1.4W Surface Mount PowerPAK® SO-8 Dual

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SI7960DP-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

Si7960DP

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

6.2A

Rds On (Max) @ Id, Vgs

21mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package