SI8409DB-T1-E1
SI8409DB-T1-E1
Part Number SI8409DB-T1-E1 Description MOSFET P-CH 30V 4.6A 2X2 4-MFP Package / Case 4-XFBGA, CSPBGAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
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SI8409DB-T1-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8409DB Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 46mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 1.47W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-XFBGA, CSPBGA
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