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SI8425DB-T1-E1


SI8425DB-T1-E1

Part NumberSI8425DB-T1-E1

Manufacturer

Description

Datasheet

Package / Case4-UFBGA, WLCSP

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI8425DB-T1-E1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs23mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta), 2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-WLCSP (1.6x1.6)
Package / Case4-UFBGA, WLCSP

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