Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8483DB-T2-E1

SI8483DB-T2-E1

SI8483DB-T2-E1

Part NumberSI8483DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 16A MICROFOOT

DatasheetSI8483DB-T2-E1

Package / Case6-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

To learn about the specification of SI8483DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8483DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8483DB-T2-E1.
We are offering SI8483DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8483DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8483DB-T2-E1
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	26mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1840pF @ 6V
FET Feature	-
Power Dissipation (Max)	2.77W (Ta), 13W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-Micro Foot™ (1.5x1)
Package / Case	6-UFBGA

SI8483DB-T2-E1 - Related Products

	MCU20P10-TP	Micro Commercial Co, P-Channel 100V 20A 70W Surface Mount D-Pak,	View
	SQJ481EP-T1_GE3	Vishay Siliconix, P-Channel 80V 16A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IRF9Z14SPBF	Vishay Siliconix, P-Channel 60V 6.7A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,	View
	FDD9511L-F085	ON Semiconductor, P-Channel 40V 25A (Tc) 48.4W (Tj) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®	View
	IRFL9014TRPBF	Vishay Siliconix, P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,	View
	SQJ409EP-T1_GE3	Vishay Siliconix, P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	DMP2045UFY4-7	Diodes Incorporated, P-Channel 20V 4.7A (Ta) 670mW (Ta) Surface Mount X2-DFN2015-3,	View
	IRFI9630GPBF	Vishay Siliconix, P-Channel 200V 4.3A (Tc) 35W (Tc) Through Hole TO-220-3,	View
	SI4459BDY-T1-GE3	Vishay Siliconix, P-Channel 30V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO, TrenchFET® Gen IV	View
	MIC94051YM4-TR	Microchip Technology, P-Channel 6V 1.8A (Ta) 568mW (Ta) Surface Mount SOT-143, SymFET™	View
	FDY101PZ	ON Semiconductor, P-Channel 20V 150mA (Ta) 625mW (Ta) Surface Mount SC-89-3, PowerTrench®	View
	SI3469DV-T1-GE3	Vishay Siliconix, P-Channel 20V 5A (Ta) 1.14W (Ta) Surface Mount 6-TSOP, TrenchFET®	View

SI8483DB-T2-E1 - Tags

SI8483DB-T2-E1 SI8483DB-T2-E1 PDF SI8483DB-T2-E1 datasheet SI8483DB-T2-E1 specification SI8483DB-T2-E1 image SI8483DB-T2-E1 India Renesas Electronics India SI8483DB-T2-E1 buy SI8483DB-T2-E1 SI8483DB-T2-E1 price SI8483DB-T2-E1 distributor SI8483DB-T2-E1 supplier SI8483DB-T2-E1 wholesales