Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8483DB-T2-E1

SI8483DB-T2-E1

SI8483DB-T2-E1

Part NumberSI8483DB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 16A MICROFOOT

DatasheetSI8483DB-T2-E1

Package / Case6-UFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

To learn about the specification of SI8483DB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8483DB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8483DB-T2-E1.
We are offering SI8483DB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8483DB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8483DB-T2-E1
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	26mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1840pF @ 6V
FET Feature	-
Power Dissipation (Max)	2.77W (Ta), 13W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-Micro Foot™ (1.5x1)
Package / Case	6-UFBGA

SI8483DB-T2-E1 - Related Products

	SSM3J327R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.9A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	RV2C001ZPT2L	Rohm Semiconductor, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount DFN1006-3 (VML1006),	View
	BSH201,215	Nexperia USA Inc., P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount TO-236AB,	View
	SI7617DN-T1-GE3	Vishay Siliconix, P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	PMPB27EP,115	Nexperia USA Inc., P-Channel 30V 6.1A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6,	View
	SI2347DS-T1-GE3	Vishay Siliconix, P-Channel 30V 5A (Tc) 1.7W (Tc) Surface Mount SOT-23-3, TrenchFET®	View
	FDC604P	ON Semiconductor, P-Channel 20V 5.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	RV1C001ZPT2L	Rohm Semiconductor, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount VML0806,	View
	SQJ461EP-T1_GE3	Vishay Siliconix, P-Channel 60V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	DMP6350S-7	Diodes Incorporated, P-Channel 60V 1.5A (Ta) 720mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101	View
	SIA461DJ-T1-GE3	Vishay Siliconix, P-Channel 20V 12A (Tc) 3.4W (Ta), 17.9W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	IRF6215PBF	Infineon Technologies, P-Channel 150V 13A (Tc) 110W (Tc) Through Hole TO-220AB, HEXFET®	View

SI8483DB-T2-E1 - Tags

SI8483DB-T2-E1 SI8483DB-T2-E1 PDF SI8483DB-T2-E1 datasheet SI8483DB-T2-E1 specification SI8483DB-T2-E1 image SI8483DB-T2-E1 India Renesas Electronics India SI8483DB-T2-E1 buy SI8483DB-T2-E1 SI8483DB-T2-E1 price SI8483DB-T2-E1 distributor SI8483DB-T2-E1 supplier SI8483DB-T2-E1 wholesales