Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si8808DB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	95mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 15V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-UFBGA

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PSMN025-80YLX	Nexperia USA Inc., N-Channel 80V 37A (Tc) 95W (Tc) Surface Mount LFPAK56, Power-SO8,	View
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APT13F120B	Microsemi Corporation, N-Channel 1200V 14A (Tc) 625W (Tc) Through Hole TO-247 [B],	View
AON2290	Alpha & Omega Semiconductor Inc., N-Channel 100V 4.5A (Ta) 2.8W (Ta) Surface Mount 6-DFN-EP (2x2),	View
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SI8808DB-T2-E1

Part NumberSI8808DB-T2-E1