Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8810EDB-T2-E1

SI8810EDB-T2-E1

SI8810EDB-T2-E1

Part NumberSI8810EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 2.1A MICROFOOT

DatasheetSI8810EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

To learn about the specification of SI8810EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8810EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8810EDB-T2-E1.
We are offering SI8810EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8810EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8810EDB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	72mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	245pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-XFBGA

SI8810EDB-T2-E1 - Related Products

	TSM026NA03CR RLG	Taiwan Semiconductor Corporation, N-Channel 30V 168A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6),	View
	IRF3415STRLPBF	Infineon Technologies, N-Channel 150V 43A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	PSMN1R7-30YL,115	Nexperia USA Inc., N-Channel 30V 100A (Tc) 109W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRFS7434TRL7PP	Infineon Technologies, N-Channel 40V 240A (Tc) 245W (Tc) Surface Mount D2PAK-7, HEXFET®, StrongIRFET™	View
	2N7000-D26Z	ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,	View
	IXFR44N50Q3	IXYS, N-Channel 500V 25A (Tc) 300W (Tc) Through Hole ISOPLUS247™, HiPerFET™	View
	RTL035N03TR	Rohm Semiconductor, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6,	View
	STL23NM50N	STMicroelectronics, N-Channel 500V 2.8A (Ta), 14A (Tc) 3W (Ta), 125W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ II	View
	SIHH180N60E-T1-GE3	Vishay Siliconix, N-Channel 600V 19A (Tc) 114W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	2V7002LT1G	ON Semiconductor, N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101	View
	IXFN210N30X3	IXYS, N-Channel 300V 210A (Tc) 695W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	IPD60R400CEAUMA1	Infineon Technologies, N-Channel 600V 14.7A (Tc) 112W (Tc) Surface Mount PG-TO252, CoolMOS™ CE	View

SI8810EDB-T2-E1 - Tags

SI8810EDB-T2-E1 SI8810EDB-T2-E1 PDF SI8810EDB-T2-E1 datasheet SI8810EDB-T2-E1 specification SI8810EDB-T2-E1 image SI8810EDB-T2-E1 India Renesas Electronics India SI8810EDB-T2-E1 buy SI8810EDB-T2-E1 SI8810EDB-T2-E1 price SI8810EDB-T2-E1 distributor SI8810EDB-T2-E1 supplier SI8810EDB-T2-E1 wholesales