Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8810EDB-T2-E1

SI8810EDB-T2-E1

SI8810EDB-T2-E1

Part NumberSI8810EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 2.1A MICROFOOT

DatasheetSI8810EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot

To learn about the specification of SI8810EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8810EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8810EDB-T2-E1.
We are offering SI8810EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8810EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8810EDB
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	72mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	245pF @ 10V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-Microfoot
Package / Case	4-XFBGA

SI8810EDB-T2-E1 - Related Products

	RCD080N25TL	Rohm Semiconductor, N-Channel 250V 8A (Ta) 850mW (Ta), 20W (Tc) Surface Mount CPT3,	View
	FDME410NZT	ON Semiconductor, N-Channel 20V 7A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®	View
	IXTF02N450	IXYS, N-Channel 4500V 200mA (Tc) 78W (Tc) Through Hole ISOPLUS i4-PAC™,	View
	IPP180N10N3GXKSA1	Infineon Technologies, N-Channel 100V 43A (Tc) 71W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	FDY301NZ	ON Semiconductor, N-Channel 20V 200mA (Ta) 625mW (Ta) Surface Mount SC-89-3, PowerTrench®	View
	IXTP36N30P	IXYS, N-Channel 300V 36A (Tc) 300W (Tc) Through Hole TO-220AB, PolarHT™	View
	BUK9277-55A,118	Nexperia USA Inc., N-Channel 55V 18A (Tc) 51W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	TSM4424CS RVG	Taiwan Semiconductor Corporation, N-Channel 20V 8A (Tc) 2.5W (Ta) Surface Mount 8-SOP,	View
	FDP26N40	ON Semiconductor, N-Channel 400V 26A (Tc) 265W (Tc) Through Hole TO-220-3, UniFET™	View
	CSD19538Q2	Texas Instruments, N-Channel 100V 14.4A (Ta) 2.5W (Ta), 20.2W (Tc) Surface Mount 6-WSON (2x2), NexFET™	View
	STB80N20M5	STMicroelectronics, N-Channel 200V 61A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ V	View
	STB43N65M5	STMicroelectronics, N-Channel 650V 42A (Tc) 250W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, MDmesh™	View

SI8810EDB-T2-E1 - Tags

SI8810EDB-T2-E1 SI8810EDB-T2-E1 PDF SI8810EDB-T2-E1 datasheet SI8810EDB-T2-E1 specification SI8810EDB-T2-E1 image SI8810EDB-T2-E1 India Renesas Electronics India SI8810EDB-T2-E1 buy SI8810EDB-T2-E1 SI8810EDB-T2-E1 price SI8810EDB-T2-E1 distributor SI8810EDB-T2-E1 supplier SI8810EDB-T2-E1 wholesales