SI8819EDB-T2-E1


SI8819EDB-T2-E1

Part NumberSI8819EDB-T2-E1

Manufacturer

Description

Datasheet

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI8819EDB-T2-E1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 3.7V
Rds On (Max) @ Id, Vgs80mOhm @ 1.5A, 3.7V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 6V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-MICRO FOOT® (0.8x0.8)
Package / Case4-XFBGA

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SI8819EDB-T2-E1 - Tags

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