Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

Part NumberSIA413DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 12A SC70-6

DatasheetSIA413DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA413DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA413DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA413DJ-T1-GE3.
We are offering SIA413DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA413DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA413DJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	29mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	57nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA413DJ-T1-GE3 - Related Products

	FQD7P20TM	ON Semiconductor, P-Channel 200V 5.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak, QFET®	View
	FDMA291P	ON Semiconductor, P-Channel 20V 6.6A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	DMG2307L-7	Diodes Incorporated, P-Channel 30V 2.5A (Ta) 760mW (Ta) Surface Mount SOT-23,	View
	SSM3J56ACT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVI	View
	SQ2389ES-T1_GE3	Vishay Siliconix, P-Channel 40V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View
	RQ3E120ATTB	Rohm Semiconductor, P-Channel 30V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),	View
	FDMA520PZ	ON Semiconductor, P-Channel 20V 7.3A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	DMP1081UCB4-7	Diodes Incorporated, P-Channel 12V 3A (Ta), 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,	View
	DMP1081UCB4-7	Diodes Incorporated, P-Channel 12V 3A (Ta), 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,	View
	DMP3056LDM-7	Diodes Incorporated, P-Channel 30V 4.3A (Ta) 1.25W (Ta) Surface Mount SOT-26,	View
	SI2333-TP	Micro Commercial Co, P-Channel 12V 6A (Tc) 350mW (Tc) Surface Mount SOT-23,	View
	ZXM61P02FTA	Diodes Incorporated, P-Channel 20V 900mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View

SIA413DJ-T1-GE3 - Tags

SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 PDF SIA413DJ-T1-GE3 datasheet SIA413DJ-T1-GE3 specification SIA413DJ-T1-GE3 image SIA413DJ-T1-GE3 India Renesas Electronics India SIA413DJ-T1-GE3 buy SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 price SIA413DJ-T1-GE3 distributor SIA413DJ-T1-GE3 supplier SIA413DJ-T1-GE3 wholesales