Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

Part NumberSIA413DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 12A SC70-6

DatasheetSIA413DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA413DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA413DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA413DJ-T1-GE3.
We are offering SIA413DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA413DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA413DJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	29mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	57nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA413DJ-T1-GE3 - Related Products

	AONR21307	Alpha & Omega Semiconductor Inc., P-Channel 30V 24A (Tc) 5W (Ta), 28W (Tc) Surface Mount 8-DFN-EP (3x3),	View
	FDWS9509L-F085	ON Semiconductor, P-Channel 40V 65A (Tc) 107W (Tj) Surface Mount 8-DFN (5.1x6.3), Automotive, AEC-Q101, PowerTrench®	View
	IRFU9024PBF	Vishay Siliconix, P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,	View
	CMS16P06H8-HF	Comchip Technology, P-Channel 60V 5A (Ta), 16A (Tc) 2W (Ta), 25W (Tc) Surface Mount DFN5x6 (PR-PAK),	View
	CSD25213W10	Texas Instruments, P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1), NexFET™	View
	SI8425DB-T1-E1	Vishay Siliconix, P-Channel 20V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6), TrenchFET®	View
	SI3433CDV-T1-GE3	Vishay Siliconix, P-Channel 20V 6A (Tc) 1.6W (Ta), 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	FJ6K01010L	Panasonic Electronic Components, P-Channel 12V 4A (Ta) 700mW (Ta) Surface Mount WSMini6-F1-B,	View
	DMP1200UFR4-7	Diodes Incorporated, P-Channel 12V 2A (Ta) 480mW (Ta) Surface Mount X2-DFN1010-3,	View
	DMP2003UPS-13	Diodes Incorporated, P-Channel 20V 150A (Tc) 1.4W Surface Mount PowerDI5060-8,	View
	SSM3J328R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	DMG1013UW-7	Diodes Incorporated, P-Channel 20V 820mA (Ta) 310mW (Ta) Surface Mount SOT-323,	View

SIA413DJ-T1-GE3 - Tags

SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 PDF SIA413DJ-T1-GE3 datasheet SIA413DJ-T1-GE3 specification SIA413DJ-T1-GE3 image SIA413DJ-T1-GE3 India Renesas Electronics India SIA413DJ-T1-GE3 buy SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 price SIA413DJ-T1-GE3 distributor SIA413DJ-T1-GE3 supplier SIA413DJ-T1-GE3 wholesales