Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA427DJ-T1-GE3

SIA427DJ-T1-GE3

SIA427DJ-T1-GE3

Part NumberSIA427DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 8V 12A SC-70-6

DatasheetSIA427DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA427DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA427DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA427DJ-T1-GE3.
We are offering SIA427DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA427DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA427DJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	16mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 4V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA427DJ-T1-GE3 - Related Products

	RU1C001ZPTL	Rohm Semiconductor, P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount UMT3F,	View
	MIC94050YM4-TR	Microchip Technology, P-Channel 6V 1.8A (Ta) 568mW (Ta) Surface Mount SOT-143, SymFET™	View
	FQB7P20TM	ON Semiconductor, P-Channel 200V 7.3A (Tc) 3.13W (Ta), 90W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	SQ3481EV-T1_GE3	Vishay Siliconix, P-Channel 30V 7.5A (Tc) 4W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®	View
	SSM3J371R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SPB80P06PGATMA1	Infineon Technologies, P-Channel 60V 80A (Tc) 340W (Tc) Surface Mount PG-TO263-3-2, SIPMOS®	View
	IRF6218PBF	Infineon Technologies, P-Channel 150V 27A (Tc) 250W (Tc) Through Hole TO-220AB, HEXFET®	View
	SI8823EDB-T2-E1	Vishay Siliconix, P-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8), TrenchFET® Gen III	View
	SI4421DY-T1-E3	Vishay Siliconix, P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	FQPF11P06	ON Semiconductor, P-Channel 60V 8.6A (Tc) 30W (Tc) Through Hole TO-220F, QFET®	View
	DMP1022UFDF-7	Diodes Incorporated, P-Channel 12V 9.5A (Ta) 730mW (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	BSC084P03NS3GATMA1	Infineon Technologies, P-Channel 30V 14.9A (Ta), 78.6A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View

SIA427DJ-T1-GE3 - Tags

SIA427DJ-T1-GE3 SIA427DJ-T1-GE3 PDF SIA427DJ-T1-GE3 datasheet SIA427DJ-T1-GE3 specification SIA427DJ-T1-GE3 image SIA427DJ-T1-GE3 India Renesas Electronics India SIA427DJ-T1-GE3 buy SIA427DJ-T1-GE3 SIA427DJ-T1-GE3 price SIA427DJ-T1-GE3 distributor SIA427DJ-T1-GE3 supplier SIA427DJ-T1-GE3 wholesales