SIA432DJ-T1-GE3
SIA432DJ-T1-GE3
Part Number SIA432DJ-T1-GE3 Description MOSFET N-CH 30V 12A SC70-6 Package / Case PowerPAK® SC-70-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single
To learn about the specification of SIA432DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA432DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA432DJ-T1-GE3.
We are offering SIA432DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIA432DJ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIA432DJ Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 15V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6
SIA432DJ-T1-GE3 - Related ProductsMore >>
STF16N60M2 STMicroelectronics, N-Channel 600V 12A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2
View
TSM320N03CX RFG Taiwan Semiconductor Corporation, N-Channel 30V 5.5A (Tc) 1.8W (Tc) Surface Mount SOT-23,
View
IPT007N06NATMA1 Infineon Technologies, N-Channel 60V 300A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™
View
IPP60R280P6XKSA1 Infineon Technologies, N-Channel 600V 13.8A (Tc) 104W (Tc) Through Hole PG-TO220-3, CoolMOS™
View
SIR690DP-T1-GE3 Vishay Siliconix, N-Channel 200V 34.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®
View
IPB065N15N3GATMA1 Infineon Technologies, N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7, OptiMOS™
View
IRLS3036TRLPBF Infineon Technologies, N-Channel 60V 195A (Tc) 380W (Tc) Surface Mount D2PAK, HEXFET®
View
IXFN48N50 IXYS, N-Channel 500V 48A (Tc) 520W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
STD3NK50ZT4 STMicroelectronics, N-Channel 500V 2.3A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH™
View
STY60NM50 STMicroelectronics, N-Channel 500V 60A (Tc) 560W (Tc) Through Hole MAX247™, MDmesh™
View
NTHL082N65S3F ON Semiconductor, N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-247-3, SuperFET® III
View
BUK9Y12-100E,115 Nexperia USA Inc., N-Channel 100V 85A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101
View
SIA432DJ-T1-GE3 - Tags
English
