Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA449DJ-T1-GE3

SIA449DJ-T1-GE3

SIA449DJ-T1-GE3

Part NumberSIA449DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 12A SC70-6

DatasheetSIA449DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA449DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA449DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA449DJ-T1-GE3.
We are offering SIA449DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA449DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA449DJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2140pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA449DJ-T1-GE3 - Related Products

	CPH3356-TL-W	ON Semiconductor, P-Channel 20V 2.5A (Ta) 1W (Ta) Surface Mount 3-CPH,	View
	SQD19P06-60L_T4GE3	Vishay Siliconix, P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	SIR167DP-T1-GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen III	View
	DMP26M7UFG-7	Diodes Incorporated, P-Channel 20V 18A (Ta), 40A (Tc) 2.3W (Ta) Surface Mount PowerDI3333-8,	View
	SI8817DB-T2-E1	Vishay Siliconix, P-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	SSM3J35AMFV,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 250mA (Ta) 150mW (Ta) Surface Mount VESM, U-MOSVII	View
	CSD25211W1015	Texas Instruments, P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5), NexFET™	View
	SSM3J371R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SQJ431AEP-T1_GE3	Vishay Siliconix, P-Channel 200V 9.4A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SSM3J134TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI	View
	IRFR9210PBF	Vishay Siliconix, P-Channel 200V 1.9A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	FDS4465	ON Semiconductor, P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View

SIA449DJ-T1-GE3 - Tags

SIA449DJ-T1-GE3 SIA449DJ-T1-GE3 PDF SIA449DJ-T1-GE3 datasheet SIA449DJ-T1-GE3 specification SIA449DJ-T1-GE3 image SIA449DJ-T1-GE3 India Renesas Electronics India SIA449DJ-T1-GE3 buy SIA449DJ-T1-GE3 SIA449DJ-T1-GE3 price SIA449DJ-T1-GE3 distributor SIA449DJ-T1-GE3 supplier SIA449DJ-T1-GE3 wholesales