Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

Part NumberSIA456DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 2.6A SC70-6

DatasheetSIA456DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA456DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA456DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA456DJ-T1-GE3.
We are offering SIA456DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA456DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA456DJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 100V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA456DJ-T1-GE3 - Related Products

	SI2310-TP	Micro Commercial Co, N-Channel 60V 3A (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	IRFHM830TRPBF	Infineon Technologies, N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount PQFN (3x3), HEXFET®	View
	2N7002-T1-GE3	Vishay Siliconix, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236,	View
	STB7ANM60N	STMicroelectronics, N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount D2PAK, MDmesh™ II	View
	SI4114DY-T1-E3	Vishay Siliconix, N-Channel 20V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	FDD6680AS	ON Semiconductor, N-Channel 30V 55A (Ta) 60W (Ta) Surface Mount TO-252, PowerTrench®, SyncFET™	View
	APT48M80L	Microsemi Corporation, N-Channel 800V 49A (Tc) 1135W (Tc) Through Hole TO-264 [L],	View
	TSM600N25ECH C5G	Taiwan Semiconductor Corporation, N-Channel 250V 8A (Tc) 52W (Tc) Through Hole TO-251 (IPAK),	View
	DMT8012LFG-7	Diodes Incorporated, N-Channel 80V 9.5A (Ta), 35A (Tc) 2.2W (Ta), 30W (Tc) Surface Mount PowerDI3333-8,	View
	BSS169H6327XTSA1	Infineon Technologies, N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	SI8808DB-T2-E1	Vishay Siliconix, N-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	IRF3805STRLPBF	Infineon Technologies, N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®	View

SIA456DJ-T1-GE3 - Tags

SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 PDF SIA456DJ-T1-GE3 datasheet SIA456DJ-T1-GE3 specification SIA456DJ-T1-GE3 image SIA456DJ-T1-GE3 India Renesas Electronics India SIA456DJ-T1-GE3 buy SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 price SIA456DJ-T1-GE3 distributor SIA456DJ-T1-GE3 supplier SIA456DJ-T1-GE3 wholesales