Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

Part NumberSIA456DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 2.6A SC70-6

DatasheetSIA456DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA456DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA456DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA456DJ-T1-GE3.
We are offering SIA456DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA456DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA456DJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 100V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA456DJ-T1-GE3 - Related Products

	DMG1012T-7	Diodes Incorporated, N-Channel 20V 630mA (Ta) 280mW (Ta) Surface Mount SOT-523,	View
	STS8N6LF6AG	STMicroelectronics, N-Channel 60V 8A (Ta) 3.2W (Ta) Surface Mount 8-SO, Automotive, AEC-Q101, STripFET™ F6	View
	IRF1018ESTRLPBF	Infineon Technologies, N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK, HEXFET®	View
	IRFS11N50ATRRP	Vishay Siliconix, N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount D2PAK,	View
	STB6N65M2	STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Surface Mount D2PAK, MDmesh™	View
	BSC13DN30NSFDATMA1	Infineon Technologies, N-Channel 300V 16A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	BSZ019N03LSATMA1	Infineon Technologies, N-Channel 30V 22A (Ta). 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	IRLML6246TRPBF	Infineon Technologies, N-Channel 20V 4.1A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	DMN10H170SK3Q-13	Diodes Incorporated, N-Channel 100V 12A (Tc) 42W (Tc) Surface Mount TO-252, Automotive, AEC-Q101	View
	IRL7833PBF	Infineon Technologies, N-Channel 30V 150A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	DMT3006LFDF-7	Diodes Incorporated, N-Channel 30V 14.1A (Ta) 800mW (Ta) Surface Mount U-DFN2020-6 (Type F), Automotive, AEC-Q101	View
	IRL540PBF	Vishay Siliconix, N-Channel 100V 28A (Tc) 150W (Tc) Through Hole TO-220AB,	View

SIA456DJ-T1-GE3 - Tags

SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 PDF SIA456DJ-T1-GE3 datasheet SIA456DJ-T1-GE3 specification SIA456DJ-T1-GE3 image SIA456DJ-T1-GE3 India Renesas Electronics India SIA456DJ-T1-GE3 buy SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 price SIA456DJ-T1-GE3 distributor SIA456DJ-T1-GE3 supplier SIA456DJ-T1-GE3 wholesales