Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3

Part NumberSIA477EDJT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 12A SC70-6

DatasheetSIA477EDJT

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA477EDJT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA477EDJT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA477EDJT-T1-GE3.
We are offering SIA477EDJT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA477EDJT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA477EDJT
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	3050pF @ 6V
FET Feature	-
Power Dissipation (Max)	19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA477EDJT-T1-GE3 - Related Products

	SSM3J36FS,LF	Toshiba Semiconductor and Storage, P-Channel 20V 330mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSIII	View
	IRLTS2242TRPBF	Infineon Technologies, P-Channel 20V 6.9A (Ta) 2W (Ta) Surface Mount 6-TSOP, HEXFET®	View
	DMP210DUFB4-7	Diodes Incorporated, P-Channel 20V 200mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3,	View
	RQ6L020SPTCR	Rohm Semiconductor, P-Channel 60V 2A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
	NVMFS5A160PLZWFT1G	ON Semiconductor, P-Channel 60V 15A (Ta), 100A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View
	FQB47P06TM-AM002	ON Semiconductor, P-Channel 60V 47A (Tc) 3.75W (Ta), 160W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	DMG2301L-7	Diodes Incorporated, P-Channel 20V 3A (Ta) 1.5W (Ta) Surface Mount SOT-23,	View
	MCH3374-TL-E	ON Semiconductor, P-Channel 12V 3A (Ta) 1W (Ta) Surface Mount SC-70FL/MCPH3,	View
	IRFL9014TRPBF	Vishay Siliconix, P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,	View
	ZXM62P02E6TA	Diodes Incorporated, P-Channel 20V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,	View
	IRF9388TRPBF	Infineon Technologies, P-Channel 30V 12A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	IRF9317TRPBF	Infineon Technologies, P-Channel 30V 16A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View

SIA477EDJT-T1-GE3 - Tags

SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 PDF SIA477EDJT-T1-GE3 datasheet SIA477EDJT-T1-GE3 specification SIA477EDJT-T1-GE3 image SIA477EDJT-T1-GE3 India Renesas Electronics India SIA477EDJT-T1-GE3 buy SIA477EDJT-T1-GE3 SIA477EDJT-T1-GE3 price SIA477EDJT-T1-GE3 distributor SIA477EDJT-T1-GE3 supplier SIA477EDJT-T1-GE3 wholesales