Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA811ADJ-T1-GE3

SIA811ADJ-T1-GE3

SIA811ADJ-T1-GE3

Part NumberSIA811ADJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 4.5A PPAK SC70-6

DatasheetSIA811ADJ

Package / CasePowerPAK® SC-70-6 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 4.5A (Tc) 1.8W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

To learn about the specification of SIA811ADJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA811ADJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA811ADJ-T1-GE3.
We are offering SIA811ADJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA811ADJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA811ADJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	LITTLE FOOT®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	116mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	345pF @ 10V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.8W (Ta), 6.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Dual
Package / Case	PowerPAK® SC-70-6 Dual

SIA811ADJ-T1-GE3 - Related Products

	IRFR9014TRPBF	Vishay Siliconix, P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	SQ4425EY-T1_GE3	Vishay Siliconix, P-Channel 30V 18A (Tc) 6.8W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®	View
	SI3415A-TP	Micro Commercial Co, P-Channel 20V 4A 1.4W Surface Mount SOT-23,	View
	SI2323DDS-T1-GE3	Vishay Siliconix, P-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23, TrenchFET®	View
	SI2333DS-T1-GE3	Vishay Siliconix, P-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SI4143DY-T1-GE3	Vishay Siliconix, P-Channel 30V 25.3A (Tc) 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	FDV045P20L	ON Semiconductor, P-Channel 20V 1.15A (Ta) 1.6W (Ta) Surface Mount SOT-23-3,	View
	SSM6J50TU,LF	Toshiba Semiconductor and Storage, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount UF6, U-MOSIV	View
	CSD25481F4	Texas Instruments, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™	View
	IRFR9214TRPBF	Vishay Siliconix, P-Channel 250V 2.7A (Tc) 50W (Tc) Surface Mount DPAK,	View
	FDMS4435BZ	ON Semiconductor, P-Channel 30V 9A (Ta), 18A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	CMUDM8001 TR	Central Semiconductor Corp, P-Channel 20V 100mA (Ta) 250mW (Ta) Surface Mount SOT-523,	View

SIA811ADJ-T1-GE3 - Tags

SIA811ADJ-T1-GE3 SIA811ADJ-T1-GE3 PDF SIA811ADJ-T1-GE3 datasheet SIA811ADJ-T1-GE3 specification SIA811ADJ-T1-GE3 image SIA811ADJ-T1-GE3 India Renesas Electronics India SIA811ADJ-T1-GE3 buy SIA811ADJ-T1-GE3 SIA811ADJ-T1-GE3 price SIA811ADJ-T1-GE3 distributor SIA811ADJ-T1-GE3 supplier SIA811ADJ-T1-GE3 wholesales