SIA811ADJ-T1-GE3
SIA811ADJ-T1-GE3
Part Number SIA811ADJ-T1-GE3
Description MOSFET P-CH 20V 4.5A PPAK SC70-6
Package / Case PowerPAK® SC-70-6 Dual
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 4.5A (Tc) 1.8W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual
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SIA811ADJ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIA811ADJ
Standard Package 1
Manufacturer Vishay Siliconix
Series LITTLE FOOT®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 116mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 8V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 10V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.8W (Ta), 6.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Dual
Package / Case PowerPAK® SC-70-6 Dual
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