SIA907EDJT-T1-GE3
SIA907EDJT-T1-GE3
Part Number SIA907EDJT-T1-GE3 Description MOSFET 2P-CH 20V 4.5A SC-70-6L Package / Case PowerPAK® SC-70-6 DualUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 P-Channel (Dual) 20V 4.5A (Tc) 7.8W Surface Mount
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SIA907EDJT-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SIA907EDJT-T1-GE3 Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Not For New Designs FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Rds On (Max) @ Id, Vgs 57mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 7.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual
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