SIA910EDJ-T1-GE3


SIA910EDJ-T1-GE3

Part NumberSIA910EDJ-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SC-70-6 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIA910EDJ-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs28mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds455pF @ 6V
Power - Max7.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual
Base Part NumberSIA910E

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SIA910EDJ-T1-GE3 - Tags

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