SIA911EDJ-T1-GE3

Part NumberSIA911EDJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2P-CH 20V 4.5A SC70-6

DatasheetSIA911EDJ

Package / CasePowerPAK® SC-70-6 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 P-Channel (Dual) 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

To learn about the specification of SIA911EDJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA911EDJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA911EDJ-T1-GE3.
We are offering SIA911EDJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA911EDJ-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SIA911EDJ

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.5A

Rds On (Max) @ Id, Vgs

101mOhm @ 2.7A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

7.8W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6 Dual

Supplier Device Package