SIA929DJ-T1-GE3
SIA929DJ-T1-GE3
Part Number SIA929DJ-T1-GE3 Description MOSFET 2P-CH 30V 4.5A SC70-6 Package / Case PowerPAK® SC-70-6 DualUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 P-Channel (Dual) 30V 4.5A (Tc) 7.8W Surface Mount
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SIA929DJ-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SIA929DJ-T1-GE3 Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Rds On (Max) @ Id, Vgs 64mOhm @ 3A, 10V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 575pF @ 15V Power - Max 7.8W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual
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