SIB406EDK-T1-GE3
SIB406EDK-T1-GE3
Part Number SIB406EDK-T1-GE3 Description MOSFET N-CH 20V 6A SC-75-6 Package / Case PowerPAK® SC-75-6LUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 6A (Tc) 1.95W (Ta), 10W (Tc) Surface Mount PowerPAK® SC-75-6L Single
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SIB406EDK-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIB406EDK Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 46mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V FET Feature - Power Dissipation (Max) 1.95W (Ta), 10W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-75-6L Single Package / Case PowerPAK® SC-75-6L
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