SIB457EDK-T1-GE3
SIB457EDK-T1-GE3
Part Number SIB457EDK-T1-GE3
Description MOSFET P-CH 20V 9A PPAK SC75-6L
Package / Case PowerPAK® SC-75-6L
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount
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SIB457EDK-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIB457EDK
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 8V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-75-6L
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