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SIB457EDK-T1-GE3


SIB457EDK-T1-GE3

Part NumberSIB457EDK-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SC-75-6L

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIB457EDK-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs35mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 8V
Vgs (Max)±8V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-75-6L

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