SIB900EDK-T1-GE3

Part NumberSIB900EDK-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 20V 1.5A SC-75-6

DatasheetSIB900EDK

Package / CasePowerPAK® SC-75-6L Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 20V 1.5A 3.1W Surface Mount PowerPAK® SC-75-6L Dual

To learn about the specification of SIB900EDK-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIB900EDK-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIB900EDK-T1-GE3.
We are offering SIB900EDK-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIB900EDK-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SIB900EDK

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A

Rds On (Max) @ Id, Vgs

225mOhm @ 1.6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-75-6L Dual

Supplier Device Package