Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIDR622DP-T1-GE3

SIDR622DP-T1-GE3

SIDR622DP-T1-GE3

Part NumberSIDR622DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 150V

DatasheetSIDR622DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 150V 64.6A (Ta), 56.7A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

To learn about the specification of SIDR622DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR622DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR622DP-T1-GE3.
We are offering SIDR622DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIDR622DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIDR622DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	64.6A (Ta), 56.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	17.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1516pF @ 75V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8

SIDR622DP-T1-GE3 - Related Products

	STL30N10F7	STMicroelectronics, N-Channel 100V 30A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VII	View
	IXFP22N65X2	IXYS, N-Channel 650V 22A (Tc) 390W (Tc) Through Hole TO-220, HiPerFET™	View
	NTD14N03RT4G	ON Semiconductor, N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Surface Mount DPAK,	View
	FQP55N10	ON Semiconductor, N-Channel 100V 55A (Tc) 155W (Tc) Through Hole TO-220-3, QFET®	View
	NTA4001NT1G	ON Semiconductor, N-Channel 20V 238mA (Tj) 300mW (Tj) Surface Mount SC-75, SOT-416,	View
	CSD18510Q5B	Texas Instruments, N-Channel 40V 300A (Tc) 156W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	BUK9Y30-75B,115	Nexperia USA Inc., N-Channel 75V 34A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	IPD70R950CEAUMA1	Infineon Technologies, N-Channel 700V 7.4A (Tc) 68W (Tc) Surface Mount PG-TO252-3, CoolMOS™	View
	IXFX64N60P	IXYS, N-Channel 600V 64A (Tc) 1040W (Tc) Through Hole PLUS247™-3, HiPerFET™, PolarHT™	View
	IRFPC40PBF	Vishay Siliconix, N-Channel 600V 6.8A (Tc) 150W (Tc) Through Hole TO-247-3,	View
	BSS123W-7-F	Diodes Incorporated, N-Channel 100V 170mA (Ta) 200mW (Ta) Surface Mount SOT-323,	View
	DMN3009SFG-7	Diodes Incorporated, N-Channel 30V 16A (Ta), 45A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8,	View

SIDR622DP-T1-GE3 - Tags

SIDR622DP-T1-GE3 SIDR622DP-T1-GE3 PDF SIDR622DP-T1-GE3 datasheet SIDR622DP-T1-GE3 specification SIDR622DP-T1-GE3 image SIDR622DP-T1-GE3 India Renesas Electronics India SIDR622DP-T1-GE3 buy SIDR622DP-T1-GE3 SIDR622DP-T1-GE3 price SIDR622DP-T1-GE3 distributor SIDR622DP-T1-GE3 supplier SIDR622DP-T1-GE3 wholesales