SIDR626DP-T1-GE3


SIDR626DP-T1-GE3

Part NumberSIDR626DP-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIDR626DP-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C42.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs102nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5130pF @ 30V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package / CasePowerPAK® SO-8

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SIDR626DP-T1-GE3 - Tags

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