Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIDR680DP-T1-GE3

SIDR680DP-T1-GE3

SIDR680DP-T1-GE3

Part NumberSIDR680DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V

DatasheetSIDR680DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 32.8A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

To learn about the specification of SIDR680DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIDR680DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIDR680DP-T1-GE3.
We are offering SIDR680DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIDR680DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIDR680DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	32.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	2.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5150pF @ 40V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8

SIDR680DP-T1-GE3 - Related Products

	BUK9Y19-75B,115	Nexperia USA Inc., N-Channel 75V 48.2A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	TSM4NB65CI C0G	Taiwan Semiconductor Corporation, N-Channel 650V 4A (Tc) 70W (Tc) Through Hole ITO-220AB,	View
	IXFY30N25X3	IXYS, N-Channel 250V 30A (Tc) 176W (Tc) Surface Mount TO-252AA, HiPerFET™	View
	TSM60N600CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 8A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),	View
	SUP85N15-21-E3	Vishay Siliconix, N-Channel 150V 85A (Tc) 2.4W (Ta), 300W (Tc) Through Hole TO-220AB, TrenchFET®	View
	PSMN025-100D,118	Nexperia USA Inc., N-Channel 100V 47A (Tc) 150W (Tc) Surface Mount DPAK, TrenchMOS™	View
	SSM3H137TU,LF	Toshiba Semiconductor and Storage, N-Channel 34V 2A (Ta) 800mW (Ta) Surface Mount UFM, U-MOSIV	View
	STB33N65M2	STMicroelectronics, N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ M2	View
	STD11N60DM2	STMicroelectronics, N-Channel 650V 10A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ DM2	View
	AOUS66616	Alpha & Omega Semiconductor Inc., N-Channel 60V Surface Mount UltraSO-8™, AlphaSGT™	View
	FQP11N40C	ON Semiconductor, N-Channel 400V 10.5A (Tc) 135W (Tc) Through Hole TO-220-3, QFET®	View
	IPW60R160P6FKSA1	Infineon Technologies, N-Channel 600V 23.8A (Tc) 176W (Tc) Through Hole PG-TO247-3, CoolMOS™ P6	View

SIDR680DP-T1-GE3 - Tags

SIDR680DP-T1-GE3 SIDR680DP-T1-GE3 PDF SIDR680DP-T1-GE3 datasheet SIDR680DP-T1-GE3 specification SIDR680DP-T1-GE3 image SIDR680DP-T1-GE3 India Renesas Electronics India SIDR680DP-T1-GE3 buy SIDR680DP-T1-GE3 SIDR680DP-T1-GE3 price SIDR680DP-T1-GE3 distributor SIDR680DP-T1-GE3 supplier SIDR680DP-T1-GE3 wholesales