Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE810DF-T1-GE3

SIE810DF-T1-GE3

SIE810DF-T1-GE3

Part NumberSIE810DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 60A POLARPAK

DatasheetSIE810DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE810DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE810DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE810DF-T1-GE3.
We are offering SIE810DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE810DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE810DF
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 10V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE810DF-T1-GE3 - Related Products

	NTD4965NT4G	ON Semiconductor, N-Channel 30V 13A (Ta), 68A (Tc) 1.39W (Ta) Surface Mount DPAK-3,	View
	IRFB3207ZGPBF	Infineon Technologies, N-Channel 75V 120A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®	View
	SQJ402EP-T1_GE3	Vishay Siliconix, N-Channel 100V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	FDB2532	ON Semiconductor, N-Channel 150V 8A (Ta), 79A (Tc) 310W (Tc) Surface Mount D²PAK, PowerTrench®	View
	BSS159NH6327XTSA2	Infineon Technologies, N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, SIPMOS®	View
	STF28N60M2	STMicroelectronics, N-Channel 600V 24A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ II Plus	View
	DMT3006LDK-7	Diodes Incorporated, N-Channel 30V 17.1A (Ta), 46.2A (Tc) 1.1W (Ta) Surface Mount V-DFN3030-8,	View
	FDS8449-F085	ON Semiconductor, N-Channel 40V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, Automotive, AEC-Q101, PowerTrench®	View
	RS1E150GNTB	Rohm Semiconductor, N-Channel 30V 15A (Ta) 3W (Ta), 22.9W (Tc) Surface Mount 8-HSOP,	View
	IXFK170N20T	IXYS, N-Channel 200V 170A (Tc) 1150W (Tc) Through Hole TO-264AA (IXFK), GigaMOS™	View
	FDT439N	ON Semiconductor, N-Channel 30V 6.3A (Ta) 3W (Ta) Surface Mount SOT-223-4,	View
	BUK9Y4R4-40E,115	Nexperia USA Inc., N-Channel 40V 100A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View

SIE810DF-T1-GE3 - Tags

SIE810DF-T1-GE3 SIE810DF-T1-GE3 PDF SIE810DF-T1-GE3 datasheet SIE810DF-T1-GE3 specification SIE810DF-T1-GE3 image SIE810DF-T1-GE3 India Renesas Electronics India SIE810DF-T1-GE3 buy SIE810DF-T1-GE3 SIE810DF-T1-GE3 price SIE810DF-T1-GE3 distributor SIE810DF-T1-GE3 supplier SIE810DF-T1-GE3 wholesales