Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE810DF-T1-GE3

SIE810DF-T1-GE3

SIE810DF-T1-GE3

Part NumberSIE810DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 60A POLARPAK

DatasheetSIE810DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE810DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE810DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE810DF-T1-GE3.
We are offering SIE810DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE810DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE810DF
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	13000pF @ 10V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE810DF-T1-GE3 - Related Products

	DMN63D8L-7	Diodes Incorporated, N-Channel 30V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	SIHD6N62E-GE3	Vishay Siliconix, N-Channel 6A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA),	View
	R5021ANX	Rohm Semiconductor, N-Channel 500V 21A (Tc) 50W (Tc) Through Hole TO-220FM,	View
	IRFB7434PBF	Infineon Technologies, N-Channel 40V 195A (Tc) 294W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View
	IRFBF20STRLPBF	Vishay Siliconix, N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D2PAK,	View
	SIR670DP-T1-GE3	Vishay Siliconix, N-Channel 60V 60A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI4114DY-T1-GE3	Vishay Siliconix, N-Channel 20V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®	View
	R6004ENJTL	Rohm Semiconductor, N-Channel 600V 4A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK),	View
	SIR638ADP-T1-RE3	Vishay Siliconix, N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	SI4436DY-T1-E3	Vishay Siliconix, N-Channel 60V 8A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	STD35NF06LT4	STMicroelectronics, N-Channel 60V 35A (Tc) 80W (Tc) Surface Mount DPAK, STripFET™ II	View
	BUK7611-55A,118	Nexperia USA Inc., N-Channel 55V 75A (Tc) 166W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View

SIE810DF-T1-GE3 - Tags

SIE810DF-T1-GE3 SIE810DF-T1-GE3 PDF SIE810DF-T1-GE3 datasheet SIE810DF-T1-GE3 specification SIE810DF-T1-GE3 image SIE810DF-T1-GE3 India Renesas Electronics India SIE810DF-T1-GE3 buy SIE810DF-T1-GE3 SIE810DF-T1-GE3 price SIE810DF-T1-GE3 distributor SIE810DF-T1-GE3 supplier SIE810DF-T1-GE3 wholesales